Quantitative surface recombination imaging of single side processed silicon wafers obtained by photoluminescence modeling

Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

Electrical Properties of Different Types of Grain Boundaries in Multicrystalline Silicon by Photoluminescence Imaging

There are numerous types of Grain Boundaries (GBs) present in multicrystalline silicon wafers, such as ∑3, ∑9, ∑27 and Random Angle (RA) GBs. Small-Angle Grain Boundaries (SA GBs) are also common, and often occur in locally dense networks, creating regions of high recombination. These GBs can limit the efficiency of multicrystalline silicon solar cells, especially when they are decorated with i...

Estimation of solidification interface shapes in a boron–phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging

This paper introduces a method for estimating the shape of the solidification front along the height of a directionally-solidified multicrystalline silicon ingot. The technique uses net dopant density images, obtained on wafers via photoluminescence imaging under surface limited conditions, after the impact of grain boundaries is eliminated through an image processing procedure. By modeling the...

Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtai...

Nanoparticles prepared from porous silicon nanowires for bio-imaging and sonodynamic therapy

Evaluation of cytotoxicity, photoluminescence, bio-imaging, and sonosensitizing properties of silicon nanoparticles (SiNPs) prepared by ultrasound grinding of porous silicon nanowires (SiNWs) have been investigated. SiNWs were formed by metal (silver)-assisted wet chemical etching of heavily boron-doped (100)-oriented single crystalline silicon wafers. The prepared SiNWs and aqueous suspensions...